This article presents GaN two-dimensional electron gas (2DEG) Hall plates with low residual offset and noise at 3 V input bias. We studied devices made from three consecutive fabrication generations through current spinning offset measurements in a zero-field chamber. When operated above 1 V, the first-generation devices charted high residual offsets >1 mT. We reduced these residual offsets by three orders of magnitude in later device generations. Two experiments were performed to confirm the improvements. First, the GaN 2DEG Hall-effect plates were measured with infrared microscopy during current spinning to investigate current crowding and Joule heating. The low offset devices had minimal thermal gradients while the high offset devices had large thermal variations during current spinning. Second, zero-field current spinning was used to compare GaN 2DEG Hall-effect plates against typical commercial silicon Hall-effect plates. The Si devices had residual offsets $> 10\mu \text{T}$ biased at 3 V and AlGaN/GaN devices had residual offset $< 4~\mu \text{T}$ at 3 V, and an InAlN/GaN devices operated at 2 V had a residual offset $< 4~\mu \text{T}$ . Thus, for the first time, GaN 2DEG Hall-effect plates were shown to operate with high bias with low offsets and noise, which enables high fidelity sensing applications in extreme environments. [2020–0176]

中文翻译：

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使用红外显微镜研究高偏置 GaN 2DEG 霍尔效应板的低偏移和噪声

本文介绍了 GaN 二维电子气 (2DEG) 霍尔板，在 3 V 输入偏置下具有低残余偏移和噪声。我们通过零场室中的电流自旋偏移测量研究了由连续三代制造的器件。在高于 1 V 的电压下运行时，第一代设备绘制了 >1 mT 的高残余偏移。我们在后来的设备世代中将这些残余偏移量减少了三个数量级。进行了两个实验以确认改进。首先，在电流旋转期间用红外显微镜测量 GaN 2DEG 霍尔效应板，以研究电流拥挤和焦耳热。低偏移装置具有最小的热梯度，而高偏移装置在电流旋转期间具有较大的热变化。第二，零场电流旋转用于比较 GaN 2DEG 霍尔效应板与典型的商用硅霍尔效应板。Si 器件有残余偏移 $> 10\mu \text{T}$ 偏置电压为 3 V 且 AlGaN/GaN 器件具有残余偏移 $< 4~\mu \text{T}$ 在 3 V 下，并且在 2 V 下运行的 InAlN/GaN 器件具有残余偏移 $< 4~\mu \text{T}$ . 因此，首次展示了 GaN 2DEG 霍尔效应板在高偏置下工作，具有低偏移和低噪声，这使得在极端环境中的高保真传感应用成为可能。[2020–0176]