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Impact of Microstructure Evolution on the Long-Term Reliability of Wafer-Level Chip-Scale Package Sn–Ag–Cu Solder Interconnects
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.2 ) Pub Date : 2020-08-14 , DOI: 10.1109/tcpmt.2020.3016870
Tae-Kyu Lee , Weidong Xie , Michael Tsai , Mohamed D. Sheikh

The interaction between the continuous microstructure evolution during thermal cycling and the long-term reliability of wafer-level chip-scale packages (WLCSPs) with Sn–1.0Ag–0.5Cu (wt%) (SAC105), Sn–3.0Ag–0.5Cu (wt%) (SAC305), and Sn–3.9Ag–0.6Cu (wt%) (SAC396) solder ball interconnects were investigated. Three different body-sized WLCSP with three different solder alloys on three different board thickness were thermally cycled from 0 °C to 100 °C with 10 min of dwell time, and the microstructure evolution and their impact to the life cycle numbers were identified. Based on both experimental and calculated data, higher Ag contained solder alloys perform better in thermal cycling. However, the comparison between the calculated life cycle and the experimental results revealed mismatch, which is due to the localized recrystallization areal fraction differences. Smaller die WLCSP with $4\times {4}$ mm 2 and $3.2\times3.2$ mm 2 exhibited a large difference in expected life cycle numbers. The calculated life cycles expected a lower cycle number with thicker boards for both SAC105 and SAC396 WLCSPs, but the experimental data revealed an increase with SAC105 and a similar level of life cycle time with SAC396, for thicker boards. A widely distributed areal fraction of damage accumulation through the solder rows were observed in SAC105 compared with higher Ag solder alloy joints, which show localized damage accumulation at corner joints. The difference of areal recrystallization distribution explains the difference between SAC105 and SAC305/396 thermal cycling behavior between the calculated and experimental thermal cycling results.

中文翻译:

微结构演变对晶圆级芯片级封装Sn-Ag-Cu焊料互连的长期可靠性的影响

热循环过程中连续的微观结构演变与具有Sn–1.0Ag–0.5Cu(wt%)(SAC105),Sn–3.0Ag–0.5Cu的晶圆级芯片级封装(WLCSP)的长期可靠性之间的相互作用(wt%)(SAC305)和Sn–3.9Ag–0.6Cu(wt%)(SAC396)焊球互连进行了研究。在10分钟的停留时间下,将三种具有三种不同焊锡合金,三种不同板厚的三种不同尺寸的WLCSP热循环从0°C到100°C进行热循环,并确定了微观结构演变及其对寿命周期数的影响。根据实验和计算数据,含银量较高的焊料合金在热循环中的性能更好。但是,计算出的生命周期与实验结果之间的比较显示出不匹配,这是由于局部重结晶面积分数差异所致。较小的WLCSP $ 4 \倍{4} $ 毫米 2 $ 3.2 \次3.2 $ mm 2在预期寿命周期数上显示出很大差异。对于较厚的电路板,对于SAC105和SAC396 WLCSP,使用较厚的电路板计算得出的寿命周期预期会降低周期数,但实验数据表明,对于较厚的电路板,SAC105会增加,而SAC396的生命周期时间将达到类似水平。与较高的Ag焊料合金焊点相比,在SAC105中观察到了通过焊剂行造成的损伤累积的分布面积分布广泛,这表明较高的Ag焊料合金接头在角部焊点处存在局部损伤累积。面积重结晶分布的差异解释了SAC105和SAC305 / 396热循环行为在计算的和实验的热循环结果之间的差异。
更新日期:2020-10-06
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