While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions. These results may be used to quantify the memory content of resistive memories and tune their Fourier spectrum according to the excitation signal.

中文翻译：

---

忆阻滞回的傅立叶特征

虽然具有存储器的电阻器，有时称为忆阻元件（例如 ReRAM 单元），通常在周期性驱动的条件下进行研究，但很少关注其存储器响应（滞后）的傅立叶特征。在这里，我们通过实验证明，通过某些傅立叶级数系数​​的值，可以明确地区分忆阻系统的滞后与没有滞后的系统的线性或非线性响应。我们还表明傅立叶级数收敛取决于驾驶条件。这些结果可用于量化电阻存储器的存储器内容并根据激励信号调整它们的傅立叶频谱。