In this paper, Yb:LuScO3 crystal was processed by chemical mechanical polishing (CMP), and the surface roughness of 0.18[Formula: see text]nm was obtained. The atomic step structures of these sesquioxide crystals are successfully characterized by AFM scanning probe technology. Through several CMP experiments, the basic material removal mechanism of a ytterbium-doped LuScO3 crystal during CMP is studied. Based on the findings, a material removal model is established. The results of this study provide ideas for the study of CMP, crystal growth and epitaxy.

中文翻译：

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掺镱混合倍半氧化物（Yb:LuScO3）的化学机械抛光及其机理

在本文中，Yb:LuScO3采用化学机械抛光（CMP）处理晶体，得到0.18[公式：见正文]nm的表面粗糙度。这些倍半氧化物晶体的原子阶梯结构通过 AFM 扫描探针技术成功表征。通过多次 CMP 实验，研究了掺镱 LuScO 的基本材料去除机制3研究了 CMP 过程中的晶体。根据研究结果，建立了材料去除模型。本研究结果为CMP、晶体生长和外延的研究提供了思路。