We investigated field‐effect passivation by injecting negative charges into SiO₂/SiN_x stack using a plasma charge injection technique. The Si/SiO₂/SiN_x samples exhibited a very high flat‐band shift with a high injected negative charge density (>3.0 × 10¹³ cm²) after plasma negative charge injection; this density was higher than that for the well‐known Al₂O₃ layer. Most injected negative charges were present within approximately 90 nm of the surface of the SiN_x layer deposited by plasma‐enhanced chemical vapor deposition (PECVD) when comparing the capacitance–voltage analysis results obtained while etching the SiN_x film considering four assumptions of the injected negative charge distribution. The saturation current density in a 90‐ohm/sq boron emitter decreased from ~90 to 50 fA/cm² after negative charge injection, which is equivalent to the J_0e of the structure passivated with an Al₂O₃/SiN_x stack. Six‐inch n‐type bifacial cells with an approximately 100‐ohm/sq boron emitter passivated with SiO₂/SiN_x displayed an approximately 0.2% increase in absolute cell efficiency after negative charge injection. In addition, n‐PERT bifacial cells with a high boron sheet resistance of ~150 ohm/sq exhibited a 1.0% or higher absolute efficiency enhancement from a relatively low precharging efficiency of approximately 19.0%. We also demonstrated that the final efficiency after charging was comparable with n‐PERT bifacial cells with Al₂O₃ passivation, suggesting that the proposed process is a potential low‐cost alternative method that could replace expensive Al₂O₃ processes.

中文翻译：

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使用等离子充电技术分析掺入SiO2 / SiNx堆叠中的负电荷以在掺硼硅表面上进行场效应钝化

通过使用等离子注入技术将负电荷注入SiO ₂ / SiN _x堆中，我们研究了场效应钝化。等离子体负电荷注入后，Si / SiO ₂ / SiN _x样品表现出非常高的平带位移和高注入负电荷密度（> 3.0×10 ¹³ cm ²）。该密度高于众所周知的Al ₂ O ₃层。大多数注入的负电荷存在于SiN _x表面约90 nm内当比较注入的负电荷分布的四个假设时，在蚀刻SiN _x膜时获得的电容-电压分析结果进行比较时，通过等离子体增强化学气相沉积（PECVD）沉积的硅层。负电荷注入后，90Ω/ sq的硼发射极中的饱和电流密度从〜90降至50 fA / cm ²，这相当于用Al ₂ O ₃ / SiN _x叠层钝化的结构的J _0e。具有SiO ₂ / SiN _x钝化的约100 ohm / sq硼发射极的六英寸n型双面电池在注入负电荷后，绝对电池效率提高了约0.2％。此外，具有约150 ohm / sq的高硼薄层电阻的n ‐PERT双面电池显示出1.0％或更高的绝对效率增强，而相对较低的预充电效率约为19.0％。我们还证明，充电后的最终效率与具有Al ₂ O ₃钝化的n ‐PERT双面电池相当，这表明所提出的工艺是一种潜在的低成本替代方法，可以替代昂贵的Al ₂ O ₃工艺。