Traditional charge storage-based computer memories suffered from the scaling limits that stimulate the development of next generation memories with improved performances. This also involves the exploration of new materials and the development/exploration of unique device fabrication processes. In this work, a new type of laterally bridged Zinc oxide (ZnO) micro-bushes-based resistive memory is presented by employing simple Cut and Grow strategy. The growth of lateral ZnO micro-bushes, electrochemically grown across a 100 μm cavity (grooved on copper tape) was controlled by tuning deposition time. The memory device demonstrated unique write once read many times (WORM) behavior with exceptional stability and reliability with an on-off ratio higher than 10⁶. Moreover, the lateral memory device exhibited great potential to tackle large variations in stochastic computing applications. This unique strategy underscores a great potential to develop low cost, simple and highly reliable lateral device fabrication with exceptional functionalities, comparable to traditional fabrication methods.

传统的基于电荷存储的计算机存储器受到缩放限制的困扰，这些限制刺激了性能改进的下一代存储器的发展。这也涉及新材料的探索和独特器件制造工艺的开发/探索。在这项工作中，通过采用简单的“切割和成长”策略，提出了一种新型的基于横向桥接的氧化锌（ZnO）微灌木丛的电阻式存储器。通过调整沉积时间，可以控制电化学生长在100μm腔（刻在铜带上）上的横向ZnO微衬套的生长。该存储设备表现出独特的一次写入多次读取（WORM）行为，具有出色的稳定性和可靠性，其开/关比高于10 ⁶。此外，横向存储设备在解决随机计算应用中的巨大变化方面显示出巨大潜力。这种独特的策略强调了开发具有传统功能的低成本，简单且高度可靠的具有卓越功能的侧向器件的巨大潜力。