Abstract Si3N4 deposition from silane and ammonia in a number of III-N MOVPE reactors of various sizes was studied in a wide range of reactor conditions. It was revealed that Si3N4 deposition rate depends on temperature, pressure, carrier gas type, and ammonia concentration. Deposition rate rises with temperature up to 1050-1100 oC in a manner typical for temperature-activated processes, but under any studied conditions, including the 800-850 oC range, it is strictly linear with SiH4 concentration indicating the absence of high-order parasitic reactions at high temperature and surface passivation at low temperature. For a low-volume reactor the higher the pressure is, the faster the deposition is both for N2 and H2 carrier gases. For large reactors the dependence is non-monotonic. At temperature above 900 oC using H2 as a carrier gas results in a higher Si3N4 deposition rate than when using N2. If nitrogen is used as a carrier gas, deposition rate gradually rises with ammonia concentration. If hydrogen is used, deposition rate rapidly rises with ammonia concentration and then gradually falls. If hydrogen-nitrogen mixture is used as a carrier gas, deposition rate changes in a linear manner with the mole fraction of hydrogen in the carrier gas.

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III-N MOVPE反应器中氮化硅沉积的研究

摘要 在各种不同尺寸的 III-N MOVPE 反应器中，研究了在各种反应器条件下由硅烷和氨气沉积的 Si3N4。结果表明，Si3N4 沉积速率取决于温度、压力、载气类型和氨浓度。沉积速率随着温度升高至 1050-1100 oC，以温度激活过程的典型方式上升，但在任何研究条件下，包括 800-850 oC 范围，它与 SiH4 浓度严格线性，表明不存在高阶寄生高温反应和低温表面钝化。对于小容量反应器，压力越高，N2 和 H2 载气的沉积越快。对于大型反应堆，依赖性是非单调的。在高于 900 oC 的温度下，使用 H2 作为载气会导致比使用 N2 时更高的 Si3N4 沉积速率。如果使用氮气作为载气，沉积速率会随着氨浓度而逐渐升高。如果使用氢气，沉积速率随氨浓度迅速上升，然后逐渐下降。如果使用氢-氮混合物作为载气，则沉积速率随载气中氢的摩尔分数呈线性变化。