Comparative studies of structural and electrophysical properties were performed for Ba_0.8Sr_0.2TiO₃ (BSTO) films with the thickness of 100 nm, 120 nm and 350 nm. The surface morphology, the domain structure and local polarization switches were explored in the ferroelectric phase whereas high-frequency capacitance–voltage characteristics were measured in the paraelectric phase at 121°С. It was shown that good crystalline properties of the BSTO surface and grains are preserved until the thickness of ceramic layers decrease to 100 nm. The surface roughness did not exceed 2 – 4 nm and the average radius grains was in the range of 64 – 87 nm. Polarization domains induced with a microscope tip were stable and are conserved for several hours. Electrophysical properties of Ba_0.8Sr_0.2TiO₃ films in the paraelectric phase strongly depend on the thickness of layers of BSTO ceramics. Effective dielectric permittivity of BSTO in the limit of weak fields decreases when the film thickness decreases from 350 nm to 100 nm from 920 to 400.

对Ba _0.8 Sr _0.2 TiO ₃进行结构和电物理性质的比较研究（BSTO）膜的厚度分别为100 nm，120 nm和350 nm。在铁电相中探索了表面形态，畴结构和局部极化开关，而在121°С的顺电相中测量了高频电容-电压特性。结果表明，直到陶瓷层的厚度减小到100 nm为止，BSTO表面和晶粒的良好结晶性能得以保留。表面粗糙度不超过2-4 nm，平均半径晶粒在64-87 nm范围内。用显微镜尖端诱导的极化域是稳定的，并保留了几个小时。Ba _0.8 Sr _0.2 TiO _3的电物理性质处于顺电相的薄膜在很大程度上取决于BSTO陶瓷层的厚度。当薄膜厚度从350纳米从920纳米降低到100纳米时，BSTO的有效介电常数在弱电场的极限内降低。