Abstract The oxygen impurity exists mainly in the form of Al2O during the AlN crystal growth by the PVT method. In this paper, 2D incompressible flow and mass transport models are developed by the FEM method and by taking into account the effects of three-phase (Al/N/Al2O) Stefan flow, buoyancy and vapor diffusion during the PVT AlN crystal growth process. The effects of the growth conditions, viz. the temperature and atmospheric pressure, on the Al2O transport in a 2-in. AlN crystal growth chamber are investigated by a series of numerical simulations using the developed models. The simulation results show that Al2O transport is strongly affected by temperature and atmospheric pressure. A high temperature is unfavourable for AlN crystal growth but is beneficial for the removal of oxygen from the powder source. An increase in the atmospheric pressure can decrease the Al2O partial pressure in the growth chamber and therefore reduce the oxygen content in the growing AlN crystal.

中文翻译：

---

通过 PVT 方法对 AlN 晶体生长过程中的氧传输进行建模和模拟

摘要 在PVT法AlN晶体生长过程中，氧杂质主要以Al2O的形式存在。在本文中，二维不可压缩流动和质量传输模型是通过有限元方法开发的，并考虑了 PVT AlN 晶体生长过程中三相 (Al/N/Al2O) Stefan 流动、浮力和蒸汽扩散的影响。生长条件的影响，即。温度和大气压，在 2 英寸的 Al2O 传输。使用开发的模型通过一系列数值模拟来研究 AlN 晶体生长室。模拟结果表明，Al2O 传输受温度和大气压力的影响很大。高温不利于 AlN 晶体的生长，但有利于从粉末源中去除氧气。