The European Physical Journal B ( IF 1.6 ) Pub Date : 2020-10-05 , DOI: 10.1140/epjb/e2020-10326-8 Dan-Na Liu , Yong Guo , Yu Song
Abstract
We investigate the transport properties of double-barrier resonant tunneling diodes based on silicene nanoribbons by means of transfer matrix method under the external electric field. It is found that the transmission shows resonance suppression (enhancement) under the positive (negative) bias. The spin-dependent and valley-dependent negative differential resistance (NDR) characteristics are found both in the symmetric and asymmetric structures. The influence of various factors on the I-V characteristics is analyzed, it is found that the NDR characteristics can be greatly enhanced by the structural parameters, Fermi energy, and band gap. What should be laid stress on is that the maximum peak-to-valley ratio (PVR) can reach up to 13 by regulating the band gap. Proposed structure here could be the base of other high-frequency electronics devices.
Graphical abstract
中文翻译:
硅双势垒共振隧穿二极管中增强的负差分电阻
摘要
我们通过转移矩阵法研究了在外电场下基于硅纳米带的双势垒共振隧穿二极管的传输特性。发现该传输在正(负)偏置下显示出共振抑制(增强)。在对称和非对称结构中都发现了自旋相关和谷相关的负差分电阻(NDR)特性。分析了各种因素对IV特性的影响,发现NDR特性可以通过结构参数,费米能和能带隙大大提高。应该强调的是,通过调节带隙,最大峰谷比(PVR)可以达到13。此处提出的结构可能是其他高频电子设备的基础。