Abstract

The problem of the description of the strong interaction of the InAs/GaAs exciton quantum dot (QD) grown by molecular-beam epitaxy with acoustic phonon and electron reservoirs is studied. A nonperturbative solution to the self-energy function of the exciton quantum dot is found. It is shown that these functions at temperatures higher than 10 K differ significantly from those obtained within in the Born approximation. The accurate calculation of the self-energy function of the exciton QD makes it possible to solve the problem of decoherence and dephasing of quantum states, which opens the way to develop single-photon sources necessary in quantum calculations and quantum communication.

中文翻译：

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与硼和铁离子储层相互作用的量子点的发射光谱中的非摄动效应

摘要

研究了描述由分子束外延生长的InAs / GaAs激子量子点与声子和电子储库的强相互作用的问题。发现了激子量子点自能函数的非扰动解。结果表明，在高于10 K的温度下，这些函数与在Born近似中获得的函数明显不同。激子QD自能函数的精确计算可以解决量子态的退相干和相移问题，这为开发量子计算和量子通信中必不可少的单光子源开辟了道路。