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Design of a voltage-programmed VTH compensating pixel circuit for AMOLED displays using diode-connected a-IGZO TFT
IET Circuits, Devices & Systems ( IF 1.3 ) Pub Date : 2020-09-29 , DOI: 10.1049/iet-cds.2020.0070
Aryamick Singh 1 , Manish Goswami 2 , Kavindra Kandpal 2
Affiliation  

This study presents a novel voltage-programmed, amorphous-indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT)-based active-matrix organic light-emitting diode (AMOLED) pixel circuit. The circuit utilises the threshold voltage ( V TH ) sensing ability of a diode-connected transistor to compensate for the spatial as well as the temporal variation of the threshold voltage of the driving transistor and supply a constant current to the OLED. The circuit has been simulated in Cadence Spectre using a-IGZO TFT and OLED simulation program with integrated circuit emphasis (SPICE) models, and the analysis is presented to prove the V TH compensating capability of the proposed circuit. For small currents, about 50 nA, the error is suppressed to <9% whereas for large currents, about 2.5 µA, the error is only 1.05%. This performance has been achieved using only five TFTs and two storage capacitors.

中文翻译:

电压编程的设计 V使用二极管连接的a-IGZO TFT的AMOLED显示器的TH补偿像素电路

这项研究提出了一种新型的电压编程,基于非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFT)的有源矩阵有机发光二极管(AMOLED)像素电路。电路利用阈值电压( V TH )感测,以补偿所述空间以及所述驱动晶体管的阈值电压的时间变化和供给恒定电流给OLED的二极管连接的晶体管的能力。该电路已在Cadence Spectre中使用a-IGZO TFT和具有集成电路重点(SPICE)模型的OLED仿真程序进行了仿真,并进行了分析以证明V 拟议电路的TH补偿能力。对于小电流,大约50 nA时,误差被抑制到<9%,而对于大电流(约2.5 µA),误差仅为1.05%。仅使用五个TFT和两个存储电容器即可实现此性能。
更新日期:2020-10-02
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