We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D ₂ O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while the deuterium treatment alone creates a strong emission band at 1320 nm in the near infrared. It was found that the deuterium is actively involved in the formation of a nanostructured Si surface as evidenced from relative strength of the Si-O vibrational modes and presence of N-D bondings. The origin of this photon source was discussed in terms of oxygen related defect states and dislocations. The Si surface treated by Deuterium containing mixture exhibits a strong rectifying electrical activity as it is demonstrated by Schottky diodes fabricated on these wafers. Being compatible with mature silicon circuitry, the source may find applications in photonics and optoelectronics.

中文翻译：

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氘处理硅的1320 nm光源

我们报告了一种高效的室温光子源，其来自纳米结构硅表面的电信波长为1320 nm。该光源的激活是通过用重水（D ₂ O）含有氢氟酸和硝酸的混合物。没有氘的处理会在Si的能带边缘产生很强的发光带，而单独的氘处理会在1320 nm的近红外处产生很强的发光带。从Si-O振动模式的相对强度和ND键的存在可以证明，氘活跃地参与了纳米结构Si表面的形成。从与氧有关的缺陷状态和位错方面讨论了该光子源的起源。如在这些晶片上制造的肖特基二极管所证明的那样，用含氘混合物处理过的Si表面表现出很强的整流电活性。与成熟的硅电路兼容，该光源可以在光子学和光电子学中找到应用。