Recent advances in the field of integrated circuits based on sustainable and transparent amorphous oxide semiconductors (AOSs) are presented, demonstrating ultrahigh performance operating state-of-the-art integrated inverters comprising metal–semiconductor field-effect transistors (MESFETs) with amorphous zinc tin oxide (ZTO) as a channel material. All individual circuit layers have been deposited entirely at room temperature, and the completed devices did not require undergoing additional thermal annealing treatment in order to facilitate proper device functionality. The demonstrated ZTO-based MESFETs exhibit current on/off ratios of over 8 orders of magnitude a field-effect mobility of 8.4 cm2 V−1 s−1, and they can be switched within a voltage range of less than 1.5 V attributed to their small subthreshold swing as low as 86 mV decade−1. Due to adjustments of the circuit layout and, thus, the improvement of certain geometry-related transistor properties, the associated Schottky diode FET logic inverters facilitate low-voltage switching by exhibiting a remarkable maximum voltage gain of up to 1190 with transition voltages of only 80 mV while operating at low supply voltages ≤3 V and maintaining a stable device performance under level shift. To the best of our knowledge, the presented integrated inverters clearly exceed the performance of any similar previously reported devices based on AOS, and thus, prove the enormous potential of amorphous ZTO for sustainable, scalable low-power electronics within future flexible and transparent applications.

中文翻译：

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基于室温沉积非晶氧化锌锡的超高性能集成逆变器

介绍了基于可持续和透明非晶氧化物半导体 (AOS) 的集成电路领域的最新进展，展示了超高性能操作的最先进集成逆变器，包括具有非晶锌锡的金属半导体场效应晶体管 (MESFET)氧化物 (ZTO) 作为沟道材料。所有单独的电路层都完全在室温下沉积，完成的器件不需要进行额外的热退火处理，以促进适当的器件功能。所展示的基于 ZTO 的 MESFET 表现出超过 8 个数量级的电流开/关比和 8.4 cm2 V-1 s-1 的场效应迁移率，并且它们可以在小于 1.5 V 的电压范围内切换，这归因于它们小亚阈值摆幅低至 86 mV 十进制−1。由于电路布局的调整以及某些与几何相关的晶体管特性的改进，相关的肖特基二极管 FET 逻辑反相器通过展示高达 1190 的显着最大电压增益和仅 80 的转换电压来促进低压开关mV，同时在≤3 V 的低电源电压下工作，并在电平转换下保持稳定的器件性能。据我们所知，所展示的集成逆变器的性能明显超过了之前报道的任何基于 AOS 的类似设备的性能，因此证明了非晶 ZTO 在未来灵活透明的应用中可持续、可扩展的低功耗电子产品的巨大潜力。相关的肖特基二极管 FET 逻辑反相器具有高达 1190 的显着最大电压增益，过渡电压仅为 80 mV，同时在 ≤ 3 V 的低电源电压下运行，并在电平转换下保持稳定的器件性能，从而促进了低压开关。据我们所知，所提出的集成逆变器的性能明显超过了之前报道的任何基于 AOS 的类似设备的性能，因此证明了非晶 ZTO 在未来灵活和透明的应用中可持续、可扩展的低功率电子产品的巨大潜力。相关的肖特基二极管 FET 逻辑反相器具有高达 1190 的显着最大电压增益，过渡电压仅为 80 mV，同时在 ≤ 3 V 的低电源电压下运行，并在电平转换下保持稳定的器件性能，从而促进了低压开关。据我们所知，所展示的集成逆变器的性能明显超过了之前报道的任何基于 AOS 的类似设备的性能，因此证明了非晶 ZTO 在未来灵活透明的应用中可持续、可扩展的低功耗电子产品的巨大潜力。