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Thermally tunable terahertz omnidirectional photonic bandgap and defect mode in 1D photonic crystals containing moderately doped semiconductor
Physica E: Low-dimensional Systems and Nanostructures ( IF 3.3 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.physe.2020.114477
S. Jena , R.B. Tokas , S. Thakur , D.V. Udupa

A new one-dimensional photonic crystal (1DPC) containing moderately doped silicon (m-Si) semiconductor is proposed and its tunable properties are theoretically investigated. The tunable complex permittivity of m-Si with temperature is the central idea that makes the 1DPC thermally tunable. The 1DPC systems such as (m-Si/SiO2)12 and defective (m-Si/SiO2)6D(m-Si/SiO2)6 are examined in the spectral range of 0.4–0.8 THz with varying temperature from 40 to 100 K. Air and m-Si are considered as defect layer (D) in two different 1DPC systems. Our simulation shows that the photonic band gap (PBG) shifts to higher frequency and the omnidirectional PBG gets narrower with increasing temperature. The defect mode in both defective 1DPCs shifts to higher frequency with increasing temperature. The temperature sensitivity of peak transmission is found better in the air defective 1DPC, while that of defect frequency is better in the m-Si defective 1DPC. The angle of incidence and polarization dependency of the defect modes are studied in detail. The present work can be utilized for the development of tunable omnidirectional mirrors and narrow bandpass filters in the terahertz region as well as THz light based thermal sensors.



中文翻译:

包含中度掺杂半导体的一维光子晶体中的热可调太赫兹全向光子带隙和缺陷模式

提出了一种新的一维光子晶体(1DPC),其包含中等掺杂的硅(m -Si)半导体,并从理论上研究了其可调谐特性。m -Si随温度的可调复介电常数是使1DPC热可调的核心思想。在0.4-0.8 THz的光谱范围内,随着温度的变化,对(D- m- Si / SiO 212和有缺陷的(m -Si / SiO 26 D(m -Si / SiO 26等1DPC系统进行了研究。 40至100K。空气和-Si在两个不同的1DPC系统中被视为缺陷层(D)。我们的仿真表明,随着温度的升高,光子带隙(PBG)会移至更高的频率,而全向PBG会变窄。随着温度的升高,两个有缺陷的1DPC中的缺陷模式都移至更高的频率。在空气缺陷1DPC中发现峰值透射的温度敏感性更好,而在m -Si缺陷1DPC中缺陷频率的温度敏感性更好。详细研究了缺陷模式的入射角和偏振依赖性。本工作可用于开发太赫兹区域的可调全向镜和窄带通滤光片以及基于太赫兹光的热传感器。

更新日期:2020-10-13
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