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S doped silicon quantum dots with high quantum yield as a fluorescent sensor for determination of Fe3+ in water
Optical Materials ( IF 3.9 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.optmat.2020.110461
Xiaoshuo Zhang , Chunhua Li , Sheliang Zhao , Huiyun Pang , Yong Han , Xueli Luo , Wenzhi Tang , Zhonghong Li

Abstract Novel S-doped silicon quantum dots (S-SiQDs) were prepared by l -cysteine doped silicon quantum dots (SiQDs) for fluorescent detecting Fe3+ in water. The as-prepared S-SiQDs sensor with an average diameter of 4.77 nm possessed richness of –NH2, endowing good water solubility and strong blue fluorescence. The quantum yield (QY) of ~66% was abtained when S-SiQDs exited at 345 nm. The synergistic effect of electron transfer that the electron of –NH2 on S-SiQDs surface transfer to 3d unoccupied obrials of Fe3+, inner filter effectaccounted for fluorescence quenching. The probe possessed a relative wide liner range from 1 μmol/L to 20 μmol/L with the limit of detection (LOD) of 0.21 μmol/L to detecte Fe3+. The as-prepared S-SiQDs sensor could sensitively and selectively detect Fe3+ in real water samples with satisfied recoveries of 90%–106%, which presented its potential applicability in the environmental fields.

中文翻译:

具有高量子产率的 S 掺杂硅量子点用作测定水中 Fe3+ 的荧光传感器

摘要 采用l-半胱氨酸掺杂硅量子点(SiQDs)制备了新型S掺杂硅量子点(S-SiQDs),用于荧光检测水中的Fe3+。所制备的平均直径为 4.77 nm 的 S-SiQDs 传感器具有丰富的 –NH2,具有良好的水溶性和强烈的蓝色荧光。当 S-SiQDs 在 345 nm 处退出时,量子产率 (QY) 达到约 66%。S-SiQDs表面-NH2的电子转移到3d未占据的Fe3+的电子转移协同效应,内滤效应解释了荧光猝灭。该探针具有相对较宽的线性范围,从 1 μmol/L 到 20 μmol/L,检测限 (LOD) 为 0.21 μmol/L,可检测 Fe3+。所制备的 S-SiQDs 传感器可以灵敏、选择性地检测真实水样中的 Fe3+,回收率达到 90%–106%,
更新日期:2020-12-01
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