Abstract Quantum dots (QDs) have become promising light sources for next-generation lightings and displays. Realizing their applications in optoelectronic devices requires that QDs should retain their superior optical performances in condense QD films. However, most QD systems suffer intense photoluminescence (PL) quenching after film formation. Here, we report device-grade thick-shell CdZnSe/ZnSe/ZnS QDs with near-unity PL quantum yield (QY) in QD solution and 82% PL QY in QD film. We demonstrate that the thick shell functions well in restraining undesired inter-dot energy transfer by separating the emitting cores in condense QD film, and therefore preserving their superior emission properties. White light-emitting diodes (WLEDs) integrated with 5 different CdZnSe/ZnSe/ZnS QDs cover the visible spectrum, delivering a color rendering index (CRI) Ra as high as 91.4, a luminous efficiency (LE) of 68.5 lm/W and a warm bright sun light with correlated color temperature (CCT) of 4138 K. In particular, the champion CdZnSe/ZnSe/ZnS based WLED exhibits a special color index R9 as high as 93.1.

中文翻译：

---

用于亮白发光二极管的厚壳 CdZnSe/ZnSe/ZnS 量子点

摘要 量子点 (QD) 已成为下一代照明和显示器的有前途的光源。实现其在光电器件中的应用要求 QD 应在凝聚 QD 薄膜中保持其优越的光学性能。然而，大多数 QD 系统在成膜后遭受强烈的光致发光 (PL) 猝灭。在这里，我们报告了器件级厚壳 CdZnSe/ZnSe/ZnS QD，在 QD 溶液中具有接近统一的 PL 量子产率 (QY)，在 QD 薄膜中具有 82% 的 PL QY。我们证明了厚壳通过在凝聚 QD 薄膜中分离发射核来很好地抑制不需要的点间能量转移，从而保持其优异的发射特性。集成有 5 种不同 CdZnSe/ZnSe/ZnS QD 的白光发光二极管 (WLED) 覆盖可见光谱，