Abstract Freestanding graphene on a trench has been fabricated extensively using a transfer process of chemical vapor deposition grown graphene. Here, we demonstrate that freestanding graphene can be grown directly on a trench without a transfer process. A shallow trench was made on a 6H–SiC(0001) wafer using a focused ion beam lithography. The shallow trench was heated to a high temperature under Ar atmosphere. The heat treatment made the shallow trench become deeper and wider. Subsequently, epitaxial graphene was floating on the trench, resulting in freestanding graphene, where underlying bulk SiC was self-etched after the growth of epitaxial graphene. The freestanding graphene on a trench was characterized using Raman spectroscopy and atomic force microscopy. Such freestanding graphene writing can be applied to semiconductor fabrication process of freestanding graphene devices without a transfer process.

中文翻译：

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碳化硅晶片上的独立石墨烯书写

摘要 使用化学气相沉积生长石墨烯的转移工艺广泛地制造了沟槽上的独立石墨烯。在这里，我们证明了独立式石墨烯可以直接在沟槽上生长而无需转移过程。使用聚焦离子束光刻在 6H-SiC(0001) 晶片上制作浅沟槽。在Ar气氛下将浅沟槽加热到高温。热处理使浅沟槽变得更深更宽。随后，外延石墨烯漂浮在沟槽上，形成独立的石墨烯，在外延石墨烯生长后，下面的块状 SiC 被自蚀刻。使用拉曼光谱和原子力显微镜表征沟槽上的独立石墨烯。