Graphene fiber is considered as a potential material for wearable applications owing to its lightness, flexibility, and high electrical conductivity. After the graphene oxide (GO) solution in the liquid crystal state is assembled into GO fiber through wet spinning, the reduced graphene oxide (rGO) fiber is obtained through a reduction process. In order to further improve the electrical conductivity, herein, we report N, P, and S doped rGO fibers through a facile vacuum diffusion process. The precursors of heteroatoms such as melamine, red phosphorus, and sulfur powders were used through a vacuum diffusion process. The resulting N, P, and S doped rGO fibers with atomic% of 6.52, 4.43 and 2.06% achieved the higher electrical conductivities compared to that of rGO fiber while preserving the fibrious morphology. In particular, N doped rGO fiber achieved the highest conductivity of 1.11 × 10⁴ S m⁻¹, which is 2.44 times greater than that of pristine rGO fiber. The heteroatom doping of rGO fiber through a vacuum diffusion process is facile to improve the electrical conductivity while maintaining the original structure.

石墨烯纤维由于其轻便，柔韧性和高导电性而被认为是可穿戴应用的潜在材料。通过湿纺将液晶态的氧化石墨烯（GO）溶液组装成GO纤维之后，通过还原工艺获得还原的氧化石墨烯（rGO）纤维。为了进一步提高电导率，在本文中，我们通过简便的真空扩散过程报告了N，P和S掺杂的rGO纤维。通过真空扩散过程使用了杂原子的前体，例如三聚氰胺，红磷和硫粉。与rGO纤维相比，原子百分比为6.52、4.43和2.06％的N，P和S掺杂的rGO纤维具有更高的电导率，同时保留了纤维形态。尤其是，⁴  S m ^-1，是原始rGO纤维的2.44倍。通过真空扩散工艺对rGO纤维进行杂原子掺杂可以轻松地在保持原始结构的同时提高电导率。