The reactive deposition epitaxy growth of self-organized cobalt silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) as well as by scanning electron microscopy (SEM). Half a monolayer of cobalt was deposited on the Si(110) surfaces at ~600 °C substrate temperature. Following cobalt deposition, the substrates have been annealed for different durations. Cobalt forms aligned cobalt disilicide nanowires upon reaction with the silicon substrate, following the twofold substrate symmetry. With increasing duration of annealing, the NWs have been found to grow with larger aspect ratio (length/width), eventually producing narrower NWs. These self-organized unidirectional NWs of sub-hundred nanometer width and ~4–7 nm height produce a Schottky barrier with the silicon substrate and are expected to find applications in nanoelectronic devices.

中文翻译：

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调整Si（110）-16 × 2表面上外延单向硅化物纳米线的长宽比

通过原位扫描隧道显微镜（STM）和扫描隧道光谱（STS）以及扫描电子显微镜（SEM）研究了自组织硅化钴纳米线（NWs）在干净的Si（110）表面上的反应沉积外延生长）。在约600°C的基板温度下，将一半单层钴沉积在Si（110）表面上。在钴沉积之后，将衬底退火不同的持续时间。钴在与硅衬底反应后，按照双重衬底对称性形成对准的二硅化钴纳米线。随着退火时间的延长，已发现NW以更大的长宽比（长度/宽度）增长，最终产生更窄的NW。