In this letter, a novel high voltage trench insulated gate bipolar transistor (IGBT) with MOS structure for self-adjustable hole extraction (MOS-SH-IGBT) is proposed. It features the adjustable hole path (AHP) region controlled by the MOS structure. The AHP region stores holes during on-state, extracts holes swiftly to reduce switching loss during turn-off and provides an extra hole path to avoid latch-up during short-circuit. Because of shielding effects of the AHP region, MOS-SH-IGBT could also increase breakdown voltage (BV) and decrease Miller capacitance. Based on simulated results, the BV of the proposed device is increased by 10% compared with the conventional separate floating P-base IGBT. Furthermore, the Miller capacitance and switching loss of MOS-SH-IGBT are decreased by 64% and 29%, respectively. As for the same E on of 117.3mJ cm −2 , the dI ce /dt of the MOS-SH-IGBT is decreased by 38.7%, and for the same E of...

中文翻译：

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具有MOS结构的高压沟槽绝缘栅双极晶体管，用于自调节空穴提取

在这封信中，提出了一种新颖的具有MOS结构的高压沟槽绝缘栅双极晶体管（IGBT），用于自调节空穴提取（MOS-SH-IGBT）。它具有由MOS结构控制的可调孔路径（AHP）区域。AHP区域在导通状态下存储空穴，快速提取空穴以减少关断期间的开关损耗，并提供额外的空穴路径以避免短路期间的闩锁。由于AHP区域的屏蔽效应，MOS-SH-IGBT也可能会增加击穿电压（BV）并降低米勒电容。根据仿真结果，与常规的单独的浮动P基IGBT相比，该器件的BV增加了10％。此外，MOS-SH-IGBT的米勒电容和开关损耗分别降低了64％和29％。至于相同的E on为117.3mJ cm -2，