Patterned sapphire substrates are composed of multiple planes, leading to the undesirable polycrystalline growth of gallium nitride (GaN) during template deposition. However, patterned sapphire substrates and templates with good crystalline quality would be useful for increasing the light extraction efficiency in light-emitting diodes. In this study, a silicon dioxide (SiO₂) mask was selectively introduced onto the lenses of a patterned sapphire substrate to suppress the growth of polycrystalline GaN. The SiO₂ mask prevented the negative influence of the patterned sapphire substrate on GaN growth under various conditions. High-resolution x-ray diffraction analysis revealed that the GaN template grew as a single crystal in the presence of the SiO₂ mask. Furthermore, the compressive stress generated in the GaN template was relieved due to the suppression of polycrystalline growth.

中文翻译：

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在用于发光二极管的图案化蓝宝石衬底上的选择性掩模形成和氮化镓模板制作

图案化的蓝宝石衬底由多个平面组成，导致在模板沉积过程中不希望的氮化镓（GaN）多晶生长。然而，具有良好晶体质量的图案化的蓝宝石衬底和模板对于提高发光二极管中的光提取效率将是有用的。在这项研究中，选择性地将二氧化硅（SiO ₂）掩模引入到图案化蓝宝石衬底的透镜上，以抑制多晶GaN的生长。SiO ₂掩模防止了在各种条件下图案化的蓝宝石衬底对GaN生长的负面影响。高分辨率X射线衍射分析显示GaN模板在SiO ₂存在下以单晶生长面具。此外，由于抑制了多晶生长，因此减轻了GaN模板中产生的压应力。