Flexible and self-powered deep ultraviolet (UV) photodetectors are pivotal for next-generation electronic skins to enrich human life quality. The fabrication of epitaxial β-Ga₂O₃ thin films is challenging on flexible substrates due to high-temperature growth requirements. Herein, β-Ga₂O₃ (\(\stackrel{-}{2}\) 0 1) films are hetero-epitaxially grown on ultra-thin and environment-friendly muscovite mica which is the first time β-Ga₂O₃ epitaxy growth on any flexible substrate. Integration of Gallium oxide with muscovite enables high-temperature processing as well as excellent flexibility compared to polymer substrates. Additionally, the metal–semiconductor-metal (MSM) photodetector on β-Ga₂O₃ layer shows an ultra-low dark current of 800 fA at zero bias. The photovoltaic peak responsivity of 11.6 µA/W is obtained corresponding to very weak illumination of 75 μW/cm² of 265 nm wavelength. Thermally stimulated current (TSC) measurements are employed to investigate the optically active trap states. Among these traps, trap with an activation energy of 166 meV dominates the persistence photocurrent in the devices. Finally, photovoltaic detectors have shown excellent photocurrent stability under bending induced stress up to 0.32%. Hence, this novel heteroepitaxy opens the new way for flexible deep UV photodetectors.

灵活且自供电的深紫外 (UV) 光电探测器是下一代电子皮肤丰富人类生活质量的关键。由于高温生长要求，外延 β-Ga ₂ O ₃薄膜的制造在柔性基板上具有挑战性。在此，β-Ga ₂ O ₃ ( \(\stackrel{-}{2}\) 0 1) 薄膜异质外延生长在超薄且环保的白云母上，这是首次将β-Ga ₂ O ₃在任何柔性基板上外延生长。与聚合物基材相比，氧化镓与白云母的整合可实现高温加工以及出色的柔韧性。此外，β-Ga ₂ O ₃层上的金属-半导体-金属（MSM）光电探测器在零偏压下显示出 800 fA 的超低暗电流。对应于 75 μW/cm ^{2 的}非常微弱的照明，获得了 11.6 μA/W 的光伏峰值响应度265 nm 波长。采用热激励电流 (TSC) 测量来研究光学有源陷阱状态。在这些陷阱中，活化能为 166 meV 的陷阱主导着器件中的持久光电流。最后，光伏探测器在高达 0.32% 的弯曲应力下显示出优异的光电流稳定性。因此，这种新颖的异质外延为柔性深紫外光电探测器开辟了新途径。