In this paper, a simulation study to suppress the ambipolar current of the Schottky Barrier (SB) MOSFET is presented. In this work, a dual metal gate device structure is used. The gate of the device is composed of two different metals. The metal used at the source side gate is used region has higher work function, while the metal used at the drain side gate region has lower work function. To perform this study, the work function of the gate metal used at the source end is kept fixed. On the other hand, to choose the appropriate metal for gate at the drain end, different work function metal has been employed. Therefore, without affecting the on-state current of the device, ambipolar current has been suppressed. In addition, the performance of the proposed device has been compared with the conventional SB MOSFET. Simulation results show that the proposed device exhibits more than two-decade reduction in ambipolar current than the conventional double gate SB MOSFET.

在本文中，介绍了抑制肖特基势垒 (SB) MOSFET 双极性电流的仿真研究。在这项工作中，使用了双金属栅极器件结构。器件的栅极由两种不同的金属组成。用在源极侧栅区的金属具有较高的功函数，而用在漏极侧栅区的金属具有较低的功函数。为了进行这项研究，源极端使用的栅极金属的功函数保持固定。另一方面，为了在漏极端为栅极选择合适的金属，采用了不同的功函数金属。因此，在不影响器件通态电流的情况下，双极性电流得到了抑制。此外，所提出的器件的性能已与传统的 SB MOSFET 进行了比较。