This letter presents a wide‐band 2:1 injection‐locked frequency divider (ILFD) in the 0.18 μm BiCMOS process with circuit model of class‐AB. The ILFD uses an 8‐shaped inductor in shunt with parasitic capacitors as the resonator, and it also employs two capacitive cross‐coupled pairs to generate negative resistance for oscillation. The gate biases of capacitive cross‐coupled pairs are fully utilized to tune the free‐running ILFD oscillation frequency. At the power consumption of 2.064 mW and the input power of 0 dBm, the locking range frequency is 71.3% (from 3.7 to 7.8 GHz) and the figure of merit (FOM) is 34.54. As compared to other ILFDs using octagonal inductors, this ILFD has low EM radiation level and less sensitivity to received EM noise.

中文翻译：

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利用8形电感器进行2分频注入锁定分频器

这封信提出了采用AB类电路模型，采用0.18μmBiCMOS工艺的宽带2：1注入锁定分频器（ILFD）。ILFD使用与寄生电容器并联的8形电感器作为谐振器，并且还使用两个电容性交叉耦合对来产生负电阻来产生振荡。电容交叉耦合对的栅极偏置被充分利用，以调整自由运行的ILFD振荡频率。在2.064 mW的功耗和0 dBm的输入功率下，锁定范围频率为71.3％（从3.7到7.8 GHz），品质因数（FOM）为34.54。与使用八角形电感器的其他ILFD相比，该ILFD具有较低的EM辐射水平，并且对接收到的EM噪声的灵敏度较低。