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Terahertz-elasticity for single crystal silicon
Optics and Lasers in Engineering ( IF 4.6 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.optlaseng.2020.106396
Kai Kang , Shibin Wang , Lin an Li , Zhiyong Wang , Chuanwei Li

Abstract Terahertz radiation has been used to obtain material's internal information because of its penetrability to optically opaque materials. In this paper, terahertz radiation is adopted to characterize the stress in single crystal silicon. Firstly, a theoretical model is established to describe the relationship between the phase retardation of the terahertz radiation and the stresses undergone by silicon specimen. Then, the stress-optical coefficients of single crystal silicon are determined as π11=5.2 × 10−13 Pa−1, π12=-8.4 × 10−13 Pa−1, π44=9.8 × 10−13 Pa−1 through uniaxial compression experiments. At last, an experimental technique is developed to determine the stress components of a state of plane stress of single crystal silicon.

中文翻译:

单晶硅的太赫兹弹性

摘要 太赫兹辐射因其对光学不透明材料的穿透性而被用于获取材料的内部信息。本文采用太赫兹辐射来表征单晶硅中的应力。首先,建立了一个理论模型来描述太赫兹辐射的相位延迟与硅样品所承受的应力之间的关系。然后,通过单轴压缩确定单晶硅的应力光学系数为π11=5.2 × 10-13 Pa-1,π12=-8.4 × 10-13 Pa-1,π44=9.8 × 10-13 Pa-1实验。最后,开发了一种确定单晶硅平面应力状态应力分量的实验技术。
更新日期:2021-02-01
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