Memristors are designed to mimic the brain’s integrated functions of storage and computing, thus breaking through the von Neumann framework. However, the formation and breaking of the conductive filament inside a conventional memristor is unstable, which makes it difficult to realistically mimic the function of a biological synapse. This problem has become a main factor that hinders memristor applications. The ferroelectric memristor overcomes the shortcomings of the traditional memristor because its resistance variation depends on the polarization direction of the ferroelectric thin film. In this work, an Au/Hf_0.5Zr_0.5O₂/p⁺-Si ferroelectric memristor is proposed, which is capable of achieving resistive switching characteristics. In particular, the proposed device realizes the stable characteristics of multilevel storage, which possesses the potential to be applied to multi-level storage. Through polarization, the resistance of the proposed memristor can be gradually modulated by flipping the ferroelectric domains. Additionally, a plurality of resistance states can be obtained in bidirectional continuous reversibility, which is similar to the changes in synaptic weights. Furthermore, the proposed memristor is able to successfully mimic biological synaptic functions such as long-term depression, long-term potentiation, paired-pulse facilitation, and spike-timing-dependent plasticity. Consequently, it constitutes a promising candidate for a breakthrough in the von Neumann framework.

忆阻器旨在模仿大脑的存储和计算的集成功能，从而突破了冯·诺依曼框架。然而，常规忆阻器内部的导电丝的形成和断裂是不稳定的，这使得难以现实地模仿生物突触的功能。该问题已成为阻碍忆阻器应用的主要因素。铁电忆阻器克服了传统忆阻器的缺点，因为其电阻变化取决于铁电薄膜的极化方向。在这项工作中，Au / Hf _0.5 Zr _0.5 O ₂ / p ⁺提出了能够实现电阻切换特性的-Si铁电忆阻器。特别地，所提出的设备实现了多层存储的稳定特性，其具有被应用于多层存储的潜力。通过极化，可以通过翻转铁电畴来逐渐调制所提出的忆阻器的电阻。另外，可以在双向连续可逆性中获得多个阻力状态，这类似于突触权重的变化。此外，拟议的忆阻器能够成功模拟生物学突触功能，例如长期抑制，长期增强，成对脉冲促进和依赖尖峰时序的可塑性。所以，