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A Study on N-Type Bismuth Sulphochloride (BiSCl): Efficient Synthesis and Characterization
Nano ( IF 1.2 ) Pub Date : 2020-07-10 , DOI: 10.1142/s1793292020501167
H. Zhang 1 , S. H. Sun 1 , J. C. Liu 1 , F. Hong 2 , Y. Zhu 1 , B. Zhou 3 , Y. M. Hu 3
Affiliation  

Irregular rod-like bismuth sulphochloride (BiSCl) was synthesized by a high efficiency process in which BiCl3 and Bi2S3 were fully ground and mixed in N2 atmosphere followed by a sintering at 227C for 9 h to achieve crimson BiSCl powder. The products were characterized by X-ray powder diffraction (XRD) and scanning electronic microscopy coupled with energy dispersive X-ray spectroscopy (SEM-EDX). The BiSCl is an n-type semiconductor with a bandgap of 1.9 eV. In the temperature range of 300–500 K, thermal conductivity, electrical conductivity, Seebeck coefficient and thermoelectric figure of merit ZT of the BiSCl were tested and calculated. It is resulted that the BiSCl has a thermal conductivity of 0.45 Wm−1K−1 at 500 K and a Seebeck coefficient of −579 μVK−1 at 400 K. This work will help inform future in-depth studies on possible applications of BiSCl in the fields of thermoelectricity, optoelectronics and photocatalyticity.

中文翻译:

N型氯化铋(BiSCl)的研究:高效合成和表征

通过高效工艺合成不规则棒状硫氯化铋 (BiSCl),其中 BiCl3和毕2小号3完全研磨并在 N 中混合2气氛,然后在 227 下烧结C 9 h 得到深红色 BiSCl 粉末。通过X射线粉末衍射(XRD)和扫描电子显微镜结合能量色散X射线光谱(SEM-EDX)对产物进行表征。BiSCl 是带隙为 1.9 eV 的 n 型半导体。在300-500 K的温度范围内,对BiSCl的热导率、电导率、塞贝克系数和热电品质因数ZT进行了测试和计算。结果表明,BiSCl 的热导率为 0.45 Wm-1ķ-1在 500 K 和 -579 μVK 的塞贝克系数-1在 400 K。这项工作将有助于进一步深入研究 BiSCl 在热电、光电子和光催化领域的可能应用。
更新日期:2020-07-10
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