Noble metal nanoparticles dispersed in semiconductors, mainly in ZnO, have been intensively investigated. Au dispersion and possible precipitation as well as damage growth were studied in ZnO of various orientations, a-plane (110) and c-plane (0001), using 1 MeV Au⁺-ion implantation with an ion fluence of 1.5 × 10¹⁶ cm⁻² and subsequently annealed at 600 °C in an ambient atmosphere for one hour. Afterwards, irradiation with 10 MeV O³⁺ at a fluence of 5 × 10¹⁴ cm⁻² was used to modify Au distribution and internal morphology as well as to follow the structural modification of ZnO under high-energy light-ion irradiation. Rutherford backscattering spectrometry in the channelling mode (RBS-C) and Raman spectroscopy show that O irradiation with high electronic energy transfer distinctly modifies the implanted Au layer in various ZnO facets; it introduces additional displacement and disorder in the O sublattice mainly in the a-plane while not creating an additional strain in this facet. This has been confirmed by XRD analysis, identifying the appearance of an additional phase (nanocrystallites) after Au implantation, which diminishes after O irradiation, and RBS-C has identified decreased disorder in the Zn-sublattice. Unlike in c-plane ZnO, it has been possible to observe a local compressive deformation around spherical defects, which is more pronounced after O irradiation simultaneously with the vertical strain introduced in the Au-implanted and annealed layer. Transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) was employed to investigate the interior morphology, showing the occurrence of Au-hcp clusters of the small sizes of about 4–10 nm; neither the cluster sizes nor their shapes are significantly affected by the O irradiation.

中文翻译：

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用高能O离子修饰的各种Au离子注入的ZnO刻面中的纳米结构

已经广泛研究了分散在半导体中（主要是ZnO中）的贵金属纳米颗粒。使用1 MeV Au ⁺离子注入且离子密度为1.5×10 ^16的1 MeV Au ⁺离子注入，研究了在不同方向的ZnO中a面（11 0）和c面（0001）的Au分散和可能的析出以及损伤的增长。cm ^-2，然后在环境气氛中于600°C退火一小时。之后，以5×10 ¹⁴ cm ^-2的通量照射10 MeV O ³⁺。在高能光离子辐照下，ZnO用于修饰Au的分布和内部形态，并遵循ZnO的结构修饰。沟道模式的Rutherford背散射光谱（RBS-C）和拉曼光谱显示，高电子能量转移的O辐照能明显地修饰各种ZnO刻面中注入的Au层。它在O子晶格中主要在a平面上引入了附加的位移和无序，而在此刻面中没有产生附加的应变。这已经通过XRD分析得到了证实，确定了Au注入后附加相（纳米晶体）的出现，O辐照后该相减少了，并且RBS-C已确定Zn亚晶格中无序的减少。不像C在平面ZnO上，可以观察到球形缺陷周围的局部压缩变形，这在O辐照之后以及在Au注入和退火层中引入的垂直应变的同时更加明显。透射电子显微镜（TEM）和能量色散光谱（EDS）用于研究内部形态，表明出现了约4-10 nm的小尺寸Au-hcp团簇。O辐照既不影响簇的大小，也不影响其形状。