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Tuning the properties of boron-doped reduced graphene oxide by altering the boron content
New Journal of Chemistry ( IF 3.3 ) Pub Date : 2020-09-29 , DOI: 10.1039/d0nj03909h
Nonjabulo P. D. Ngidi 1, 2, 3, 4, 5 , Moses A. Ollengo 1, 2, 3, 4, 5 , Vincent O. Nyamori 1, 2, 3, 4, 5
Affiliation  

The design and fabrication of electronic devices based on graphene nanomaterials are dependent on the tuning of Fermi levels. This can be achieved by doping graphene oxide (GO) with an electron-withdrawing (p-type) or electron-donating (n-type) species that causes changes in the electron density and enhances the electrochemical properties. In this research, the effect of boron content on the optical, electrochemical, and conductivity properties of GO was investigated. Boron-doped reduced graphene oxide (B-rGO) was synthesized via a chemical vapor deposition method by using GO and varying amounts of boric anhydride, as a boron precursor, at a doping temperature of 600 °C. The B-rGO samples were characterized by standard spectroscopic techniques. B-rGO had a sheet structure with various graphene islands and disordered regions. The highest boron content incorporated into the reduced GO framework was 7.12%. B-rGO samples manifested strong absorption in the ultraviolet region. An electronic band structure with a low charge resistance of 20.23 Ω and enhanced electrical conductivity properties of 5.920 S cm−1 was observed and noted to be dependent on the concentration of boron incorporated. All the B-rGO samples demonstrated a p-type conductivity behaviour which is attributed to an increase in the density of states near the Fermi level. This work opens a new avenue for the fabrication of solar cells based on p-type B-rGO.

中文翻译:

通过改变硼含量来调整掺硼还原氧化石墨烯的性能

基于石墨烯纳米材料的电子设备的设计和制造取决于费米能级的调整。这可以通过用引起电子密度变化并增强电化学性能的吸电子(p型)或给电子(n型)物质掺杂氧化石墨烯(GO)来实现。在这项研究中,研究了硼含量对GO的光学,电化学和导电性能的影响。硼掺杂还原氧化石墨烯(B-rGO)通过一种化学气相沉积方法,使用GO并在600℃的掺杂温度下使用不同量的硼酸酐作为硼前体。B-rGO样品通过标准光谱技术进行表征。B-rGO具有片状结构,具有各种石墨烯岛和无序区域。还原的GO骨架中掺入的最高硼含量为7.12%。B-rGO样品在紫外线区域表现出较强的吸收能力。具有20.23Ω的低充电电阻和5.920 S cm -1的增强的导电性的电子带结构观察到并指出其取决于掺入的硼的浓度。所有的B-rGO样品均表现出p型电导行为,这归因于费米能级附近状态密度的增加。这项工作为基于p型B-rGO的太阳能电池的制造开辟了一条新途径。
更新日期:2020-10-15
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