Hybrid structures of quantum dots (QDs) on two-dimensional materials have aroused great interest because of their high absorbance properties and tunable wavelength detection ranges. In this work, 1.44 times the photoresponse bandwidth of PbSe QDs on atomic-layered GeS hybrid structure devices is achieved compared with pure GeS devices due to the transfer of photogenerated carriers between the PbSe QDs and the GeS film. A doubling of the peak photoresponsivity is obtained at a wavelength of 635 nm, and the detectivity of the hybrid devices increases by 39.5 and 27.4 times under 808 and 980 nm illumination, respectively. Additionally, tripling of the carrier mobility is measured in the hybrid devices (165.2 cm 2 V −1 s −1 ) compared with that of pure atomic-layered GeS devices (54.2 cm 2 V −1 s −1 ). The concentration of PbSe QDs on the GeS films is optimized for the highest photoresponsivity and carrier mobility of the hyb...

中文翻译：

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通过原子层状GeS器件上的PbSe量子点增强光电检测

二维材料上的量子点（QD）的混合结构因其高吸收特性和可调的波长检测范围而引起了人们的极大兴趣。在这项工作中，由于光生载流子在PbSe QD和GeS膜之间转移，因此与纯GeS器件相比，原子层GeS混合结构器件上的PbSe QD的光响应带宽达到了1.44倍。在635 nm的波长下，峰值光响应率增加了一倍，并且在808和980 nm的光照下，混合器件的检测率分别提高了39.5和27.4倍。另外，与纯原子层GeS器件（54.2cm 2 V -1 s -1）相比，在混合器件（165.2 cm 2 V -1 s -1）中测量了三倍的载流子迁移率。