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Integration of buried piezoresistive sensors and PZT thin film for dynamic and static position sensing of MEMS actuator
Journal of Micromechanics and Microengineering ( IF 2.3 ) Pub Date : 2020-09-28 , DOI: 10.1088/1361-6439/abb756
Andrea Vergara, Takashiro Tsukamoto, Weileun Fang and Shuji Tanaka

We developed a lead zirconate titanate (PZT) thin film actuator integrated with buried piezoresistors for the dynamic and static deformation sensing of a PZT MEMS actuator. We demonstrated the fabrication of sol-gel deposited PZT thin film devices combined with buried piezoresistors and proved, for the first time, the process compatibility of these materials. Dopant concentration measured by secondary ion mass spectrometry (SIMS) analysis confirms that the piezoresistor was successfully buried into the device. Motion detection of the fabricated MEMS cantilever actuated by the PZT thin film was successful and consistent with optical measurement as well as design values. From these results, we can conclude that our PZT actuator and piezoresistive sensors can be monolithically integrated. The fabrication process developed here can be used for high-stability piezoelectric MEMS actuators with feed-back control of position.

中文翻译:

埋入式压阻传感器和PZT薄膜的集成,用于MEMS执行器的动态和静态位置感测

我们开发了与埋藏式压敏电阻集成的锆钛酸铅(PZT)薄膜致动器,用于PZT MEMS致动器的动态和静态变形感测。我们演示了结合埋入压敏电阻的溶胶-凝胶沉积PZT薄膜器件的制造,并首次证明了这些材料的工艺兼容性。通过二次离子质谱(SIMS)分析测量的掺杂剂浓度证实了压敏电阻已成功地埋入该器件中。由PZT薄膜驱动的制成的MEMS悬臂梁的运动检测是成功的,并且与光学测量以及设计值一致。从这些结果可以得出结论,我们的PZT执行器和压阻传感器可以单片集成。
更新日期:2020-09-29
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