Herein, in situ temperature‐dependent THz and DC conductivity measurements in the crystalline states of Ge₂Sb₂Te₅ (GST225) are performed at relatively high temperatures (>300 K). As observed in many nanomaterials, a non‐Drude type of THz conductivity is found in the crystalline state of phase‐change (PC) materials. Both the intra‐ and intergrain effects can be separated in the THz and DC conductivity. It is shown that grain boundaries significantly affect the THz and DC conductivities of the crystalline phase (distorted rock salt structure). The experimentally observed DC Hall mobility is different from the intragrain mobility extracted from the THz conductivity, suggesting that a series sequence of intra‐ and intergrain transport mechanisms controls the electronic transport in the crystalline state of GST225.

中文翻译：

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Ge2Sb2Te5相变材料晶态中晶界对太赫兹电导率的影响：与直流损耗的关系

在这里，在Ge ₂ Sb ₂ Te ₅的晶态下进行随温度变化的原位THz和直流电导率测量（GST225）在相对较高的温度（> 300 K）下执行。正如在许多纳米材料中观察到的那样，在相变（PC）材料的晶体状态下发现了非德鲁兹（Trude）型的THz电导率。晶粒内和晶粒间的影响都可以在太赫兹和直流电导率中分开。结果表明，晶界显着影响晶相的THz和DC电导率（扭曲的盐岩结构）。实验观察到的直流霍尔迁移率不同于从太赫兹电导率中提取的晶粒内迁移率，这表明晶粒间和晶粒间传输机制的一系列序列控制着GST225晶体状态下的电子传输。