In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.

中文翻译：

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多种方法提取多量子阱肖特基二极管参数的比较研究

本工作在100~300 K温度范围内测量了多量子阱Al0.33Ga0.67As肖特基二极管的正向电流电压特性。 该肖特基二极管的主要参数，如理想因子、势垒高度、串联电阻和饱和电流，已使用分析和启发式方法提取。差分进化（DE）、粒子群优化（PSO）和人工蜂群（ABC）被选为候选启发式算法，而Cheung technic被选为分析提取方法。所得结果清楚地表明DE算法在参数精度、收敛速度和鲁棒性方面的高性能。