Silicon nitride (Si3N4)-on-SiO2 attracts increasing interest in integrated photonics owing to its low propagation loss and wide transparency window, extending from ∼400 nm to 2350 nm. Scalable integration of active devices such as amplifiers and lasers on the Si3N4 platform will enable applications requiring optical gain and a much-needed alternative to hybrid integration, which suffers from high cost and lack of high-volume manufacturability. We demonstrate a high-gain optical amplifier in Al2O3:Er3+ monolithically integrated on the Si3N4 platform using a double photonic layer approach. The device exhibits a net Si3N4-to-Si3N4 gain of 18.1±0.9 dB at 1532 nm, and a broadband gain operation over 70 nm covering wavelengths in the S-, C- and L-bands. This work shows that rare-earth-ion-doped materials and in particular, rare-earth-ion-doped Al2O3, can provide very high net amplification for the Si3N4 platform, paving the way to the development of different active devices monolithically integrated in this passive platform.

中文翻译：

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通过双层单片集成采用 Si3N4 技术的高增益波导放大器

氮化硅 (Si3N4)-on-SiO2 由于其低传播损耗和宽透明窗口（从~400 nm 延伸到 2350 nm）而引起了人们对集成光子学越来越多的兴趣。有源器件（如放大器和激光器）在 Si3N4 平台上的可扩展集成将支持需要光学增益和混合集成的急需替代方案，混合集成具有高成本和缺乏大批量可制造性的问题。我们展示了使用双光子层方法单片集成在 Si3N4 平台上的 Al2O3:Er3+ 中的高增益光放大器。该器件在 1532 nm 处表现出 18.1±0.9 dB 的 Si3N4 到 Si3N4 净增益，以及覆盖 S、C 和 L 波段波长的超过 70 nm 的宽带增益操作。这项工作表明，稀土离子掺杂材料，特别是稀土离子掺杂的 Al2O3，