Transition metal orthovanadates are emerging 2D materials for promising electrochemical energy storage applications. Facile hydrothermal method for nanocrystalline indium vanadate (InVO₄) semiconducting materials’ fabrication is economical because of its direct chemical synthesis. X‐ray diffraction studies, field emission scanning electron microscope (SEM) images, transmission electron microscopy (TEM), and photoelectron X‐ray spectrum are used to describe the semiconductor materials as synthesized. InVO₄ microspheres have attracted a lot of attention in the energy and environmental sector. These microsphere‐derived semiconductor materials are recognized to offer the advantages of their large surface area, tunable pore sizes, enhanced light absorption, efficient carrier (electron–hole) separation, superior electronic and optical behavior, and high durability. From the results of SEM and TEM, InVO₄ shows a microsphere construction with a mixture of nanosized particles. Diffuse reflectance UV–visible measurements are used to determine the bandgap, and it is found to be 2.1 eV for InVO₄. The electrochemical analysis reveals a superior performance of the pseudocapacitor with hydrothermally derived microspheres of InVO₄. Alongside an improved pseudocapacity, developed after 4000 cycles, it has excellent cycling stability with a retention of ≈94% of its original specific capacitance efficiency.

中文翻译：

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用于超级电容器的分层钒酸铟材料的制备

过渡金属原钒酸盐是新兴的2D材料，用于有前途的电化学储能应用。纳米晶钒酸盐（InVO ₄）半导体材料的简便水热法由于其直接化学合成而经济。X射线衍射研究，场发射扫描电子显微镜（SEM）图像，透射电子显微镜（TEM）和光电子X射线光谱用于描述合成的半导体材料。InVO ₄微球在能源和环境领域吸引了很多关注。这些源自微球的半导体材料具有以下优点：表面积大，孔径可调，光吸收增强，有效的载流子（电子-空穴）分离，优异的电子和光学性能以及高耐用性。根据SEM和TEM的结果，InVO ₄显示了具有纳米颗粒混合物的微球结构。漫反射紫外可见测量用于确定带隙，发现InVO ₄为2.1 eV 。电化学分析表明，假冒电容器具有水热衍生的InVO ₄微球的优异性能。除了在4000次循环后开发出的伪电容得到改善外，它还具有出色的循环稳定性，保留了其原始比电容效率的约94％。