Theoretically, normally‐off silicon carbide (SiC) junction field‐effect transistors (JFETs) do not require a negative gate voltage supply because they are in an off‐state when the gate–source voltage is 0 V. However, most gate drivers for normally‐off SiC JFETs require not only a positive power supply for turning on the JFET but also a negative power supply for turning it off and maintaining a negative gate–source voltage to suppress a false turn‐on power loss caused by crosstalk during fast switching. Therefore, modifications of gate drivers increase complications and costs. In this study, a normally‐off SiC JFET gate driver, which can be realized using a simple circuit configuration with a single power supply, is proposed. To minimize undesirable crosstalk, the gate‐source voltage of the JFET is driven to a negative value and retained in the state for a long period of time. © 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

中文翻译：

---

单电源下具有栅极电流开关的交流耦合栅极驱动器，用于常关SiC JFET

从理论上讲，常关型碳化硅（SiC）结场效应晶体管（JFET）不需要负栅极电压，因为当栅极-源极电压为0 V时它们处于截止状态。但是，大多数栅极驱动器用于常关型SiC JFET不仅需要用于接通JFET的正电源，还需要用于关断JFET的负电源，并维持负的栅极-源极电压，以抑制快速切换期间因串扰导致的虚假接通功率损耗。 。因此，修改栅极驱动器会增加复杂性和成本。在这项研究中，提出了一种常关型SiC JFET栅极驱动器，该驱动器可以使用具有单个电源的简单电路配置来实现。为了最大程度地减少不良串扰，JFET的栅极-源极电压被驱动为负值，并长时间保持该状态。©2020日本电气工程师学会。由Wiley Periodicals LLC发布。