We report initial characterization of our novel sensor process solutions with AC-coupled n${}^{+}$/p${}^{-}$/p${}^{+}$ pixel detectors made on 150 mm diameter p-type Magnetic Czochralski silicon (MCz-Si) wafers. The pixels were segmented in a 52 × 80 dual column array and designed to be AC capacitive coupled. The resistive coupling between pixels, allowing quality assurance probing prior the flip chip bonding, was realized with thin film metal-nitride resistors fabricated by sputtering deposition. This approach allows us to omit punch-through resistor structures, which reduces the overall process complexity. Moreover, our previous studies have emphasized that applying ALD Aluminum Oxide (Al${}_2$O${}_3$) field insulator and passivation layer results in negative net oxide charge and thus additional p-spray or p-stop surface current termination structures are not necessary. Our focused application is a radiation-hard ALD AC-coupled pixel detector to be used in future particle physics experiments, such as the High-Luminosity Large Hadron Collider (HL-LHC), as well as photon counting applications. The pixel detectors were tested at Helsinki Institute of Physics (HIP) Detector laboratory and Ruđer Bošković Institute (RBI). We show measurement data of pixel detectors and other test structures. For the TiN resistors surrounding pixels, the resistance values were measured to be about $15\mathrm{k}\mathrm{\Omega }$. Data of electrical properties, full depletion voltage and leakage current are shown as well. Our Transient Current Technique (TCT) measurements indicated clear pixel segmentation with excellent homogeneity. For further study, AC-coupled sensors were hybridized to PSI46dig read out chips (ROC) by flip-chip interconnection technique and tested with a radioactive source.

我们报告了采用交流耦合n的新型传感器处理解决方案的初步表征${}^{+}$/ p${}^{-}$/ p${}^{+}$在直径为150毫米的p型磁性Czochralski硅（MCz-Si）晶圆上制成的像素探测器。将像素分割为52×80双列阵列，并设计为交流电容耦合。像素之间的电阻耦合可通过倒装沉积制造的薄膜金属氮化物电阻器实现倒装芯片键合之前的质量保证探测。这种方法使我们可以省略穿通电阻器的结构，从而降低了整体工艺的复杂性。此外，我们之前的研究强调，使用ALD氧化铝（Al${}_2$Ø${}_3$场绝缘体和钝化层会产生负的净氧化物电荷，因此不需要额外的p喷雾或p停止表面电流终端结构。我们的重点应用是抗辐射的ALD交流耦合像素探测器，可用于未来的粒子物理实验，例如高光度大强子对撞机（HL-LHC）以及光子计数应用。像素检测器在赫尔辛基物理研究所（HIP）检测器实验室和RuđerBošković研究所（RBI）进行了测试。我们显示了像素检测器和其他测试结构的测量数据。对于像素周围的TiN电阻，测得的电阻值约为$15\mathrm{ķ}\mathrm{\Omega }$。还显示了电性能，全耗尽电压和泄漏电流的数据。我们的瞬态电流技术（TCT）测量结果表明，清晰的像素分割具有出色的均匀性。为了进一步研究，通过倒装芯片互连技术将交流耦合传感器与PSI46dig读出芯片（ROC）进行了杂交，并用放射源进行了测试。