The present study aimed to investigate growth of Ge nanowires on a Si substrate by chemical vapor deposition technique at atmospheric pressure using readily available precursors GeO₂ and CH₄. The process consists of two consecutive steps: generation of gaseous GeO and growth of Ge wires. The species was in-situ produced at 1100 K by the reactions between GeO₂ and CH₄ pyrolysis products. It was transported by the main gas flow to the Au-coated Si substrate heated to 1073 K and to 723 K. At 1073 K, large droplets and thick Ge wires were observed on the substrate. Ge nanowires with high aspect ratios were obtained at 723 K. Growth of Ge wires from the GeO₂-and CH₄- derived species was discussed in terms of vapor–liquid-solid mechanism and the reduction reactions.

本研究旨在通过使用易获得的前驱体GeO ₂和CH ₄在大气压下通过化学气相沉积技术研究Ge纳米线在Si衬底上的生长。该过程包括两个连续步骤：生成气态GeO和生长Ge丝。该物种是通过GeO ₂和CH ₄热解产物之间的反应在1100 K下原位产生的。通过主气流将其传输到加热到1073 K和723 K的镀金的Si衬底。在1073 K处，在衬底上观察到大的液滴和粗的Ge线。在723 K下获得了具有高纵横比的Ge纳米线。GeO _2-和CH _4可以生长Ge线。从气液固机理和还原反应方面讨论了衍生物种。