Magnetic impurities in metallic superconductors are important for both fundamental and applied sciences. In this study, we focused on dilute Mn-doped aluminum (AlMn) films, which are common superconducting materials used to make transition edge sensors and other superconducting devices. We developed a multi-energy ion-implantation technique to make AlMn films. Compared with frequently used sputtering techniques, ion-implantation provides more precise control of the Mn doping concentration in the AlMn films. It enables us to fabricate reliably AlMn films with a different superconducting transition temperature (T_c) that can match a variety of application needs. We also found that the superconducting transition temperature drops with increasing film thickness for samples with the same nominal concentration of Mn dopants. The dependence of T_c on the film thickness is attributed to the increasing implantation energy. By quantitatively analyzing the curves of T_c versus the Mn doping concentration, we propose that Mn dopants act as magnetic impurities and suppression of superconductivity is counteracted by the antiferromagnetic Ruderman–Kittel–Kasuya–Yosida interaction among Mn dopants, which is influenced by the defects induced in the ion-implantation process.

金属超导体中的磁性杂质对于基础科学和应用科学都非常重要。在这项研究中，我们重点研究了稀锰掺杂的铝（AlMn）膜，这是用于制造过渡边缘传感器和其他超导设备的常见超导材料。我们开发了一种多能量离子注入技术来制造AlMn膜。与常用的溅射技术相比，离子注入可以更精确地控制AlMn膜中的Mn掺杂浓度。它使我们能够可靠地制造具有不同超导转变温度（T _c），可以满足各种应用需求。我们还发现，对于具有相同标称浓度的Mn掺杂剂的样品，超导转变温度随膜厚度的增加而下降。T _c对膜厚度的依赖性归因于增加的注入能量。通过定量分析T _c与Mn掺杂浓度的关系曲线，我们认为Mn掺杂剂可作为磁性杂质，而Mn掺杂剂之间的反铁磁Ruderman-Kittel-Kasuya-Yosida相互作用抵消了超导性的抑制，后者受缺陷影响在离子注入过程中产生。