This article reports trap-related forward conduction instability of GaN quasi-vertical p-i-n diodes grown on a Si substrate. Three hole traps with activation energies of 0.38, 0.60, and 0.70 eV together with one electron trap with an energy level of 0.26 eV under the conduction band were revealed by deep-level transient spectroscopy (DLTS). Pulsed ${I}$ – ${V}$ measurements were performed on a device whose traps were prefilled. The rest time durations and OFF-state bias levels and periods were varied to investigate the forward ${I}$ – ${V}$ recovery phenomenon, which was highly correlated with the carrier detrapping process inside the device. The detrapping process could be greatly accelerated by a reverse bias or a lifted temperature. An “on-the-fly” resistance characterization was carried out to study the time-dependent carrier release process using short positive voltage pulses. The device was further submitted to switch-on transient assessment to investigate the time-resolved dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ evolution. The initial dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ratio was proportional to the reverse bias level and duration and was gradually decreased after continuous carrier injection until the trapping effects were overwhelmed. With a forward voltage slightly higher than the threshold voltage, it took dozens of milliseconds for the dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ to be equal to its static counterpart. It was found that at 350 K, the ON-resistance ratio could reach unit more rapidly than the room temperature case, indicating mitigation of current collapse of p-i-n diodes and their great potential for high-temperature switching applications.

中文翻译：

---

Si衬底上准垂直GaN pin二极管的正向传导不稳定性

本文报告了在 Si 衬底上生长的 GaN 准垂直 pin 二极管与陷阱相关的正向传导不稳定性。深能级瞬态光谱 (DLTS) 揭示了三个激活能分别为 0.38、0.60 和 0.70 eV 的空穴陷阱以及一个在导带下能级为 0.26 eV 的电子陷阱。脉冲 ${I}$ —— ${V}$ 测量是在一个预装了陷阱的设备上进行的。休息时间持续时间和关闭状态偏置水平和周期是变化的，以研究正向 ${I}$ —— ${V}$ 恢复现象，这与器件内部的载流子脱离过程高度相关。反偏压或升高的温度可以大大加速去陷过程。进行了“动态”电阻表征，以研究使用短正电压脉冲的时间相关载流子释放过程。该设备进一步提交给开启瞬态评估，以研究时间分辨动态 ${R}_{ \mathrm{\scriptscriptstyle ON}}$ 进化。初始动态 ${R}_{ \mathrm{\scriptscriptstyle ON}}$ 比率与反向偏置电平和持续时间成正比，并在连续载流子注入后逐渐降低，直到捕获效应被压倒。正向电压略高于阈值电压，动态需要几十毫秒 ${R}_{ \mathrm{\scriptscriptstyle ON}}$ 等于它的静态对应物。结果发现，在 350 K 时，导通电阻比可以比室温情况下更快地达到单位，这表明 pin 二极管的电流崩溃有所缓解，并且它们在高温开关应用中具有巨大潜力。