Power and RF electronics applications have spurred massive investment into a range of wide and ultrawide bandgap semiconductor devices which can switch large currents and voltages rapidly with low losses. However, the end systems using these devices are often limited by the parasitics of integrating and driving these chips from the silicon complementary metal–oxide-semiconductor-based design (CMOS) circuitry necessary for complex control logic. For that reason, implementation of CMOS logic directly in the wide bandgap platform has become a way for each maturing material to compete. This review examines potential CMOS monolithic and hybrid approaches in a variety of wide bandgap materials.

中文翻译：

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宽带隙和超宽带隙 CMOS 器件的前景

功率和射频电子应用刺激了对一系列宽和超宽带隙半导体器件的大量投资，这些器件可以以低损耗快速切换大电流和电压。然而，使用这些器件的终端系统通常受到从复杂控制逻辑所需的基于硅互补金属氧化物半导体设计 (CMOS) 电路集成和驱动这些芯片的寄生效应的限制。出于这个原因，直接在宽带隙平台中实现 CMOS 逻辑已成为每种成熟材料竞争的一种方式。本综述研究了各种宽带隙材料中潜在的 CMOS 单片和混合方法。