We report improvement of TiN/Y₂O₃/ Si_0.78Ge_0.22 metal-oxide-semiconductor (MOS) interface properties by employing the trimethylaluminum (TMA) pretreatment before Y₂O₃ deposition. It is found that the optimum number of the TMA pretreatment cycles for minimizing interface trap density ( ${D}_{\text {it}}$ ) and slow trap density ( $\Delta {N}_{\text {st}}$ ) of TiN/Y₂O₃/SiGe interfaces with post metallization annealing (PMA) at 450 °C is ten cycles. The reduction in ${D} _{\text {it}}$ and $\Delta ~{N} _{\text {st}}$ is attributable to less amounts of Ge–O bonds at the SiGe interfaces. On the other hand, an increase in ${D} _{\text {it}}$ with further increasing the number of TMA pretreatment is attributable to more amounts of Al–O bonds in ILs.

中文翻译：

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通过三甲基铝处理减少 TiN/Y₂O₃/Si0.78Ge0.22 结构中的 MOS 界面缺陷

我们报告了通过在 Y ₂ O ₃沉积之前采用三甲基铝 (TMA) 预处理来改善 TiN/Y ₂ O ₃ / Si _0.78 Ge _0.22金属-氧化物-半导体 (MOS) 界面特性。发现使界面陷阱密度最小化的 TMA 预处理循环的最佳次数（ ${D}_{\text {it}}$ ) 和慢陷阱密度 ( $\Delta {N}_{\text {st}}$ ) 的 TiN/Y ₂ O ₃ /SiGe 界面在 450 °C 下进行后金属化退火 (PMA) 是 10 个循环。减少 ${D} _{\text {it}}$ 和 $\Delta ~{N} _{\text {st}}$ 归因于 SiGe 界面上较少量的 Ge-O 键。另一方面，增加 ${D} _{\text {it}}$ 随着 TMA 预处理次数的进一步增加，可归因于 IL 中更多的 Al-O 键。