This article presents a finger-type gallium nitride (GaN) Schottky barrier diode (SBD)-based microwave rectifier with medium-power capacity and wide power bandwidth. A complete solution including SBD design and fabrication, model extraction, circuit optimization, and demonstration is proposed. The finger-type anode and critical thickness epitaxial layer techniques are adopted to reduce the GaN SBD resistance to 1.9 $\Omega $ (0.011 $\text{m}\sf \Omega \cdot \text {cm}^{{2}}$ ) and achieve nearly constant junction capacitance over a wide range of voltages (17–25 V). Revised equivalent models including the effects of large pads, critical thickness epitaxial layer, and finger-type layout are proposed to describe the new features of the SBD. A 2.45-GHz microwave rectifier based on the GaN SBD is designed and measured, having a maximum power and an efficiency of 1.91 W and 78.5%, respectively. The high-efficiency power range (≥70% and ≥75%) is significantly extended to 14 and 10.8 dB. Finally, a wireless clinical examination prototype constructed by a rectifier, antennas, biomedical sensors, and a signal processer is proposed for demonstration. The resulting wireless electrocardiogram shown in computer is clear and stable.

中文翻译：

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用于无线电力传输的基于 GaN 肖特基势垒二极管的宽带和中等功率微波整流器

本文介绍了一种基于指状氮化镓 (GaN) 肖特基势垒二极管 (SBD) 的微波整流器，具有中等功率容量和宽功率带宽。提出了包括SBD设计和制造、模型提取、电路优化和演示的完整解决方案。采用指状阳极和临界厚度外延层技术，将GaN SBD电阻降低到1.9 $\欧米茄 $ (0.011 $\text{m}\sf \Omega \cdot \text {cm}^{{2}}$ ) 并在很宽的电压范围 (17–25 V) 内实现几乎恒定的结电容。提出了包括大焊盘效应、临界厚度外延层和指型布局在内的修订等效模型来描述 SBD 的新特性。设计并测量了基于 GaN SBD 的 2.45-GHz 微波整流器，其最大功率和效率分别为 1.91 W 和 78.5%。高效功率范围（≥70%和≥75%）显着扩展至14和10.8 dB。最后，提出了由整流器、天线、生物医学传感器和信号处理器构建的无线临床检查原型进行演示。电脑显示的无线心电图清晰、稳定。