In this article, the electrical noise signal triggered switching of resistive random access memory (RRAM) device is investigated. As noise is also generated when powering up the light source, such a phenomenon can be easily mistaken as a light-activated event. Thus, it is necessary to conduct a “dark test” on the light-related experimental work to make a correct judgment of the observation. Although noise is often undesirable, we show that the voltage amplitude of the noise signal which triggers the forming process is much lower than the unipolar pulse height owing to the facilitation effect of the negative voltage. As a result, we propose a novel bipolar pulse writing scheme to reduce the forming voltage and variability. Conversely, the reverse effect is demonstrated for the set process, as the role of the negative voltage changes with the state of the device. This study provides a guideline for the design and optimization of the operation signals of the RRAM devices.

中文翻译：

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电噪声信号触发电阻开关的研究及其意义

在本文中，研究了电阻式随机存取存储器 (RRAM) 器件的电噪声信号触发开关。由于在为光源通电时也会产生噪声，因此这种现象很容易被误认为是光激活事件。因此，有必要对与光照相关的实验工作进行“暗测”，以对观察做出正确判断。尽管噪声通常是不可取的，但我们表明，由于负电压的促进作用，触发成形过程的噪声信号的电压幅度远低于单极脉冲高度。因此，我们提出了一种新颖的双极脉冲写入方案来降低形成电压和可变性。相反，对设置过程证明了相反的效果，因为负电压的作用随着器件的状态而变化。本研究为 RRAM 器件的操作信号的设计和优化提供了指导。