The lateral distributions of free carriers and defects in a channel of top gate In-Ga-Zn-O thin-film transistors were extracted using a single pulse charge pumping method. A square pulse was applied to the gate, while the charge transport current was monitored at the source–drain. A transmission line model was used to confirm the charging mechanism and extract the effective charge length. The time dependence of the trapped charge density was determined by comparing the charging and discharging transient characteristics. The lateral profiles of the free carriers and defects were decoupled successfully using the time dependence of the effective charge length, free charges, and trapped charges.

中文翻译：

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氧化物半导体沟道薄膜晶体管中缺陷和电荷的横向分析

使用单脉冲电荷泵方法提取顶栅In-Ga-Zn-O薄膜晶体管沟道中自由载流子和缺陷的横向分布。将方波脉冲施加到栅极，同时在源漏监测电荷传输电流。传输线模型用于确认充电机制并提取有效充电长度。通过比较充电和放电瞬态特性来确定捕获电荷密度的时间依赖性。使用有效电荷长度、自由电荷和俘获电荷的时间依赖性成功地解耦了自由载流子和缺陷的横向轮廓。