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Performance Modulation in All-Solution-Driven InCaOₓ/HfGdOₓ Thin-Film Transistors and Exploration in Low-Voltage-Operated Logic Circuits
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-10-01 , DOI: 10.1109/ted.2020.3012592
Chong Zhang , Gang He , Wenhao Wang , Yongchun Zhang , Yufeng Xia , Bing Yang

In current work, InCaOx thin films with different Ca-doping concentrations were prepared via solution-processed method. A systematic investigation was conducted to reveal the variation in the physical properties of InCaOx thin films as a function of Ca-doping concentration by using various characteristic measurements. Results not only demonstrate that Ca-doping can change the optical properties, microstructure, and surface roughness of In2O3 thin films but also indicate that Ca-doping can effectively decrease oxygen vacancies in In2O3 thin films. By measuring the electrical properties of InCaOx/HfGdOx thin-film transistors (TFTs) at a low operating voltage of 5 V, it is noteworthy that Ca-doping can improve the deteriorated performance of In2O3/HfGdOx TFT caused by excessive oxygen vacancies. As Ca-doping concentration reaches 0.5%, InCaOx/HfGdOx TFT manifests superior performances, including a larger $\mu _{\text {FE}}$ of 15.1 cm2V−1s−1 and a higher ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ of $2.3\times \vphantom {{1}^{\frac {{1}}{{2}}}}\,\,10^{{7}}$ . Furthermore, the stability of In2O3/HfGdOx TFTs under positive bias stress is improved after Ca-doping. Finally, an inverter with a high gain of 6.0 is assembled on the basis of InCaOx/HfGdOx TFT. More importantly, these excellent performances of InCaOx/HfGdOx TFTs are achieved at a low operating voltage, which marks a giant step toward the achievement of low cost and low power consumption electrical devices.

中文翻译:

全溶液驱动 InCaOₓ/HfGdOₓ 薄膜晶体管的性能调制和低压操作逻辑电路的探索

在目前的工作中,InCaOX通过溶液处理方法制备了具有不同 Ca 掺杂浓度的薄膜。进行了系统研究以揭示 InCaO 物理性质的变化X通过使用各种特性测量,薄膜作为 Ca 掺杂浓度的函数。结果不仅表明Ca掺杂可以改变In 2 O 3薄膜的光学性能、微观结构和表面粗糙度,而且表明Ca掺杂可以有效减少In 2 O 3薄膜中的氧空位。通过测量 InCaO 的电性能X/HfGdOX薄膜晶体管 (TFT) 在 5 V 的低工作电压下,值得注意的是,Ca 掺杂可以改善 In 2 O 3 /HfGdO的劣化性能X由过多氧空位引起的TFT。当 Ca 掺杂浓度达到 0.5% 时,InCaOX/HfGdOX TFT 表现出优越的性能,包括更大的 $\mu _{\text {FE}}$ 15.1 cm 2 V -1 s -1和更高 ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ $2.3\times \vphantom {{1}^{\frac {{1}}{{2}}}}\,\,10^{{7}}$ . 此外,In 2 O 3 /HfGdO的稳定性XCa掺杂后,正偏压下的TFT得到改善。最后,在InCaO的基础上组装了一个高增益6.0的逆变器X/HfGdOX薄膜晶体管。更重要的是,InCaO 的这些优异性能X/HfGdOX TFT 是在低工作电压下实现的,这标志着朝着实现低成本和低功耗电子器件迈出了一大步。
更新日期:2020-10-01
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