Photograph response in transparent devices has been a hot area of investigation, with several material systems being used to generate a response to illumination. In this study, we propose an ITO/MgO/HfO2/ITO bilayer (BL) transparent resistive switching (RS) device that exhibits a photograph response through defect engineering in the switching layer, which resulted in a subsurface active RS location in the formed conductive filament, thus reducing the loss of oxygen through the polycrystalline electrode. We observe that the switching performance is enhanced in the ITO/MgO/HfO2/ITO BL device as compared to the ITO/HfO2/ITO single-layer device with the insertion of MgO layer between the ITO top electrode and HfO2 RS layer. The device shows excellent ON/ OFF ratio (~107), high and stable dc electrical set and optical reset endurance (>1000 cycles without degradation), excellent retention (>104 s at 85 °C), high transparency (>85% transmittance in the visible spectrum), and a response time of 30 $\mu \text{s}$ for the optical reset. This study lays the foundation for future work involving oxide defect-based optical functionalization in RS devices with the possibility for being used in photograph sensing.

中文翻译：

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用于照片传感的基于 MgO/HfO2 双层透明结构的可见光检测和存储能力

透明设备中的照片响应一直是研究的热门领域，使用多种材料系统来产生对照明的响应。在这项研究中，我们提出了一种 ITO/MgO/HfO2/ITO 双层 (BL) 透明电阻开关 (RS) 器件，该器件通过开关层中的缺陷工程表现出照片响应，从而在形成的导电层中产生亚表面活性 RS 位置。丝，从而减少氧气通过多晶电极的损失。我们观察到，与在 ITO 顶部电极和 HfO2 RS 层之间插入 MgO 层的 ITO/HfO2/ITO 单层器件相比，ITO/MgO/HfO2/ITO BL 器件的开关性能增强。该器件具有出色的开/关比 (~107)、高且稳定的直流电设置和光复位耐久性 (> 1000 次循环而无降解）、出色的保留（85 °C 下 >104 s）、高透明度（可见光谱中的透射率 >85%）以及光学复位的 30 $\mu \text{s}$ 响应时间. 这项研究为将来涉及 RS 器件中基于氧化物缺陷的光学功能化的工作奠定了基础，并有可能用于照片传感。