This article reports a solution-processed pentacene/Al Schottky photodiode for ultraviolet (UV) detection. A low-cost dispersion method is used to fabricate the pentacene film on ITO substrates. The surface morphology, crystalline properties, electrical, and optical properties of the pentacene film have been investigated in detail by X-ray diffraction (XRD), AFM, SEM, UV-visible (Vis), and Hall measurements. Also, the UV detection characteristics were studied. The mechanism attributes to a pseudo photovoltage developed at the Schottky junction. The device shows a high sensitivity of 5.7 (372 nm), a detectivity of $1.25 \times 10^{12}$ Jones (364 nm), and a quantum efficiency of 1502% (362 nm) at 1-V applied bias. This work paves the way for developing future-generation high-performance organic photodetectors suitable for optoelectronic applications.

中文翻译：

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具有伪光伏效应的高性能溶液处理并五苯/铝肖特基紫外光电二极管

本文报道了一种用于紫外 (UV) 检测的溶液处理并五苯/Al 肖特基光电二极管。一种低成本的分散方法用于在 ITO 基板上制造并五苯薄膜。通过 X 射线衍射 (XRD)、AFM、SEM、紫外-可见 (Vis) 和霍尔测量，对并五苯薄膜的表面形貌、结晶性能、电学和光学性能进行了详细研究。此外，还研究了紫外检测特性。该机制归因于在肖特基结处产生的伪光电压。该器件显示出 5.7 (372 nm) 的高灵敏度、1.25 美元 \times 10^{12}$ Jones (364 nm) 的探测率以及在 1-V 施加偏压下的量子效率为 1502% (362 nm)。