Materials such as L10 Fe-based alloys with perpendicular magnetic anisotropy derived from crystal structure have the potential to deliver higher thermal stability of magnetic memory elements compared to materials whose anisotropy is derived from surfaces and interfaces. A number of processing parameters enable control of the quality and texture of L10 FePd; among them are substrate, deposition temperature, pressure, and seed and buffer layer. The angle of inclination between the substrate and the sputtering target can also impact the texture of L10 crystallization of sputtered FePd and magnetic properties of the derived thin films. This letter examines the difference between FePd layers that have been magnetron sputter deposited on Cr(15 nm)/Pt, Ir, or Ru(4 nm)/FePd (8 nm)/Ru(2 nm)/Ta(3 nm) substrate layers at an oblique angle (30° tilt from the sputtering target) versus normal incidence (target facing the substrate). X-ray diffraction, ferromagnetic resonance spectroscopy, and vibrating sample magnetometry were used to compare the degree of L10 order and static and dynamic properties of films deposited under both conditions. The films grown using the oblique orientation exhibit stronger degree of L10 orientation, larger magnetic anisotropy energy, and lower Gilbert damping, on all three buffer layers.

中文翻译：

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在倾斜和正常衬底取向的 MgO 单晶衬底上生长的溅射 FePd 薄膜的结构和磁性能

与各向异性源自表面和界面的材料相比，具有源自晶体结构的垂直磁各向异性的 L10 Fe 基合金等材料有可能为磁存储元件提供更高的热稳定性。许多加工参数可以控制 L10 FePd 的质量和质地；其中包括衬底、沉积温度、压力以及种子和缓冲层。衬底和溅射靶之间的倾斜角度也会影响溅射 FePd 的 L10 结晶织构和衍生薄膜的磁性能。这封信检查了在 Cr(15 nm)/Pt、Ir、或 Ru(4 nm)/FePd (8 nm)/Ru(2 nm)/Ta(3 nm) 衬底层与垂直入射（靶面向衬底）成斜角（与溅射靶倾斜 30°）。X 射线衍射、铁磁共振光谱和振动样品磁力计用于比较 L10 级的程度以及在两种条件下沉积的薄膜的静态和动态特性。使用倾斜取向生长的薄膜在所有三个缓冲层上都表现出更强的 L10 取向度、更大的磁各向异性能和更低的吉尔伯特阻尼。